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Idris A. Ajia

Idris Ajia is A PhD student with the Semiconductor and Material Spectroscopy group at KAUST. Prior to Joining the group, Idris graduated at the University of Liverpool with honours in the field of Electrical Engineering and Electronics. Subsequently, he went on to pursue a master's degree in Electrical Engineering at KAUST, where his focus was in optoelectronics and semiconductor materials. Idris previously worked in the Telecoms industry, as a transmission planning engineer. His research interests include the growth and optical characterization of AlGaN semiconductors for deep ultraviolet light emission, studying the effects of polarization in InGaN materials and reduction of threading dislocations in GaN based materials.

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KAUST

 


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T3.06 - On Grain Boundaries and Their Effect on the Optical Properties of Deep UV AlGaN/AlGaN MQWs 
Date/Time:
December 2, 2014   11:00am - 11:15am
 
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The Effects of Grain Size on the Optical Properties of AlxGa1-xN/AlyGa1-yN MQW 
Date/Time:
January 20, 2014   1:00pm - 1:30pm
 
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