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Katsuhiro Tomioka

Katsuhiro Tomioka received Ph. D. degrees of electronics and information engineering from Hokkaido University, Sapporo, Japan, in 2008.From April 2007 to March 2009, he was research fellow in Japan Science and Physics Society (JSPS). From October 2009, he became research fellow of Japan Science and Technology Agency (JST), PRESTO. His current research area is on the formation of semiconductor nanowires and devices for future application to low-power electrical switches and optical devices.He is a member of the Japan Society of Applied Physics, the Materials Research Society, and IEEE EDS.

Affiliation
Hokkaido University, Hokkaido University, JST

 


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SS10.02 - Demonstration of P-Channel Tunnel FET Using Zn-Doped Inas Nanowire/Si Heterojunction and Doping Effect 
Date/Time:
December 4, 2013   10:45am - 11:00am
 
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