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Tutorial EM10.1 - Memristive Materials and Neuromorphic Devices, Part 1 
Date/Time:
November 27, 2016   1:30pm - 5:30pm
 
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Due to the technological limitation of flash memory, a significant number of new nonvolatile memories are now being proposed. The tutorial covers the fundamental physics behind the emerging nonvolatile memories. Resistive switching memory (ReRAM) technologies (based on non-phase change materials) and its application will be the focus of this tutorial. Presentations by two leading researchers will cover the fundamental background of devices.

Themis Prodromakis will review the new materials and the physical properties required for this type of memory cells. The link between the resistance-switching mechanisms and the realization of memristor will be included in this segment, along with the state of the art of this technology. 
 


 
 
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