Keyword Suggestions

Results
 
 
Account Login
 
 
 
 
 

Library Navigation

 
 

Browse Meetings

 
 
 
TT7.03 - Ion Induced Reduction of Iron Oxides Investigated by Energy-Resolved XPS and XANES 
Date/Time:
April 8, 2015   11:15am - 11:30am
 
Speaker:
 
 
oxide 
 
Share:
 

Ion-induced reduction of metal oxides is a widely reported phenomenon. Previous studies have used surfaces-sensitive techniques such as x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) to link the phenomenon to the energy of formation of an oxide, preferential sputtering and bombardment-induced segregation of different elements. This study investigates the effective depth of ion-induced reduction on representative iron oxides (hematite Fe2O3, goethite FeOOH and magnetite Fe3O4) using synchrotron radiation. By varying the incident photon energies, oxidation states at different depths can be probed with consistent charge compensation. The spectra are resolved on energy sensitive Tougaard�s background, in comparison to a more convenient Shirley�s one. Complementary information is also obtained using x-ray absorption of near-edge structure (XANES). The study aims to establish a correlation between ion doses and the extent of reduction induced by them. This understandings may lead to a novel way to include a structurally integrated metallic state in a surface thin film of oxides.
 


 
 
Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this
 



Submit
 
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications