Keyword Suggestions

TT12.03 - Rational Design and Fabrication of Nano- and Micro-Structured Metal Oxides for Photovoltaic Application 
April 9, 2015   11:00am - 11:30am

The rapid depletion of natural Earth�s capital calls for scientists to get involved in the designing of functional materials, which should meet the need for rational preparation approaches, green chemistry principles and enhanced performances. 1,2 Semiconductor metal oxides (MOX) are flexible platforms suitable for different functional applications, such for instance solar energy conversion, photocatalysis, gas sensing. This lecture focuses on how a rational design and preparation of MOX nano- and micro-structures is actually critical in order to satisfy the need for enhanced functionality in the mentioned applications, especially photovoltaics, which might be critical for a �greener� vision of the future of our environment. Focus will be in particular given to: fabrication of hybrid photoanodes composed of TiO2 nanoparticles and multi wall carbon nanotubes (or graphene) below the percolation threshold able to boost dye sensitized solar cell (DSSC) functional performances; 2,3 integration of graphene in metal oxide-based DSSCs as transparent conductive material in front electrodes, as an alternative to more commonly applied materials, such as indium tin oxide and fluorine-doped tin oxide; 4 design and application of spray deposited ZnO optically transparent compact layer as blocking layer in ZnO-based DSSCs to boost device performances; 5,6 preparation of ZnO hierarchical structures to be applied as multifunctional active components in photoanodes for DSSCs, photocatalysis and gas sensing. Particular emphasis will be given to the exploitation of simple, cheap and low environmental impact techniques for advanced functional material preparation. 1.X. Peng, Nano Res., 2009, 2, 425-447 2.N. Armaroli, V. Balzani, Angew. Chem. Int. Ed., 2007, 46, 52 3.K. T. Dembele, G. S. Selopal, C. Soldano, R. Nechache, J. C. Rimada Herrera, I. Concina, G. Sberveglieri, F. Rosei, A. Vomiero, J. Phys. Chem. C., 2013, 117, 14510 4. J. Mater. Chem. A, DOI: 10.1039/c4ta04395b. 5. 6.S. Selopal, N. Memarian, R. Milan, I. Concina, G. Sberveglieri, A. Vomiero, ACS Appl. Mater. Interfaces, 2014, 6, 11236 G. N. Memarian, I. Concina, A. Braga, S.M. Rozati, A. Vomiero, G. Sberveglieri, Angew. Chem. Int. Ed., 2011, 50, 12321

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications