Keyword Suggestions

S9.08 - Nanowire/Nanoantennas: Unconventional Light Interaction 
April 10, 2015   4:30pm - 4:45pm

Semiconductor nanowires (NWs) have the ability to collect and trap the light into a sub-wavelength volume [1]. Even stronger light absorption ability is manifested by metallic nano-antennas that convert freely propagating optical radiation into localized energy [2]. The combination of these two systems opens a way to novel technological applications that use optical fields to manipulate and control the semiconducting properties of NWs. Recently we have shown how optical absorption in nanowires can be enhanced or reduced by the interaction with metal nanoparticles positioned on the NW facets [3]. For a broad enhancement of light absorption, an accurate design of the nano-antennas is required [4,5]. In this work, the nano-antennas geometry around GaAs nanowires has been studied theoretically and experimentally. The nano-antennas have been fabricated around the NW with electron beam lithography (E-BEAM). We demonstrate enhancement in light absorption, as well as for second order phenomena such as the generation of second harmonics and Raman scattering [4]. We perform photoconductivity measurements demonstrating that a hybrid structure formed by GaAs NWs and an array of bow-tie antennas is able to modify the polarization response of a NW[6]. The large increase in light absorption for transverse polarized light changes the NW polarization response, including the inversion. This study makes a step forward to the understanding of light coupling in engineered nanodevices and opens the way to a broad band of applications that aim to combine the plasmonic properties of metal nanostructures with the semiconducting properties of NWs. NWs and nanoantennas can constitute the basic elements of future high efficiency solar cells, optical switches and lasers. References [1]P. Krogstrup, et al., Nature Photonics, vol 7, 306-310 (2013) [2]C. Forestiere, et al., Nano Letters, vol 12, 2037-2044 (2012) [3]C. Colombo, et al., New Journal of Physics, vol 13, 123026 (2011) [4]A. Casadei, et al., Nano Letters, vol 14, 2271-2278 (2014) [5]S. Heeg, et al., Nano Letters, vol 14, 1762-1768 (2014) [6]A. Casadei, et al, Scientific Report, (under review)

Average Rating: (1 Rating)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications