Keyword Suggestions

S4.03 - Radial Heterojunction Crystalline Silicon Nanowire Solar Cells with 11.8% Conversion Efficiency 
April 8, 2015   8:45am - 9:00am

Band diagrams are a tool of fundamental importance for properly understanding the properties of heterostructures [1]. They condense crucial information about electronic properties, including band alignments, built-in fields, insulating and metallic regions and space-charge formation. The band diagram expected for an electronically reconstructed LaAlO3/SrTiO3 heterostructure is readily identified on the base of simple electrostatic arguments. It includes among it’s features a confining potential at the SrTiO3 side of the interface and a large electric field within LaAlO3. The present literature on the topic is highly controversial since the absence of the abovementioned features has been claimed in a number of publications. This contributed to shed many doubts on the origin of the interfacial 2D electron gas. In the course of our work, measurements performed of different types of heterostructures hosting a 2D electron gas are reported. As a first step, growth conditions for the fabrication of metallic LaAlO3/SrTiO3, LaGaO3/SrTiO3 and NdGaO3/SrTiO3 interfaces are addressed and compared. By resorting to several complementary techniques, including STEM-EELS [2], X-ray photoemission spectroscopy, second harmonic generation [3] and photoconductivity [4] we address the presence of intrinsic electric fields within all these heterostructures. We argue that doping effects taking place under a probing radiation in the VIS, UV or X-ray range might well affect the output of many experiments. We suggest that a thorough understanding of the steady state achieved by these systems under a photon beam is crucial for the correct interpretation of available experimental data. [1] Herbert Kroemer (Nobel Lecture), Rev. Mod. Physics 73, 783 (2001); [2] C. Cantoni, F. Miletto Granozio et al., Adv. Mater. 24, 3952 (2012); [3] E. Di Gennaro, F. Miletto Granozio et al, Adv. Opt. Mat. 1, 834 (2013); [4] G. De Luca, F. Miletto Granozio et al., Appl. Phys. Lett. 104, 261603 (2014)

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications