Keyword Suggestions

Results
 
 
Account Login
 
 
 
 
 

Library Navigation

 
 

Browse Meetings

 
 
 
P7.11 - Planar Sliding Triboelectric Nanogenerator for Active Optical MEMS 
Date/Time:
April 9, 2015   11:30am - 11:45am
 
Speaker:
 
Taxonomy
 
 
 
Share:
 

With the advantage of a high output voltage, triboelectric nanogenerator is very suitable for actuating capacitive devices. In this paper, a triboelectric nanogenerator (TENG) in planar sliding mode with dual-output voltages is proposed and firstly used for driving and controlling micromechanics. The TENG consists of a freestanding triboelectric-layer and two pairs of orthogonal electrodes. When the triboelectric-layer slides in plane, the dual-output voltages are proportional to the displacements in X and Y directions, respectively and independently. For the capacitive device actuated by the TENG, the driving voltage applied on the device is large if the load capacitance is small. Based on the TENG, an active piezoelectric micro-actuator with two orthogonal positioned piezoelectric bimorphs is developed for two-dimensional direction modulation. The piezoelectric bimorphs are actuated by the TENG and the movements of the light-spot in screen can be controlled and in proportion to the sliding of the triboelectric-layer in plane. Besides, an active electrostatic micro-actuator with two MEMS optical attenuators is also developed for double-channel power modulation. The electrostatic MEMS mirrors are actuated by the TENG and the double-channel attenuations can be controlled by the sliding of the triboelectric-layer in plane, respectively. This work presents the first active micro-actuators driven by the mechanical energy without an external power or mechanical joint, which has demonstrated the TENG�s great capabilities and broad prospects in independent and sustainable self-powered MEMS/NEMS, and opened up a new application of the TENG as the triboelectric-voltage-controlled devices.
 


 
 
Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this
 



Submit
 
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications