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P5.09 - Giant Piezoresistance and Stress in Silicon Nanowires 
Date/Time:
April 8, 2015   4:15pm - 4:45pm
 
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The magnitude of piezoresistance phenomena in p-type Silicon nanowires reported in the literature varies enormously [1] � from the known bulk Silicon values [2] up to giant piezoresistance values 100 times larger [3]. As such, the origin (and even the very existence) of the giant effect have been questioned. Despite this uncertainty, giant piezoresistance has been proposed as the basis for a wide range of force transduction applications requiring the sensitive electrical detection of MEMS and NEMS motion. This, and the fact that mechanical stress is a key ingredient in the semiconductor technology roadmap for the improvement of microelectronic device performance, suggests that an understanding of the microscopic origin of the phenomena should be a priority. This talk will present an overview of the published observations and suggested explanations [4, 5], including some of our own most recent results, and will suggest possible future research directions. [1] A.C.H. Rowe, J. Mater. Res. 29, 731 (2014) [2] J.S. Milne et al., Phys. Rev. Lett. 105, 226802 (2010); Phys. Rev. Lett. 108, 256801 (2012) [3] R.R. He et al., Nature Nanotech. 1, 42 (2006) [4] J.X. Cao et al., Phys. Rev. B 75, 233302 (2007) [5] A.C.H. Rowe, Nature Nanotech. 3, 312 (2008)
 


 
 
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