Keyword Suggestions

Account Login

Library Navigation


Browse Meetings

P4.09 - The PiezoElectronic Transistor: Forcing Materials to Switch 
April 8, 2015   10:45am - 11:15am

A piezoelectric can create enough pressure to drive a piezoresistive film from an insulating to a conductive state. If we combine these components into a monolithic device, the result is a PiezoElectronic Transistor (PET). This talk will focus on the experimental realization of the PET, describing both progress and challenges. I will discuss the high-performance materials needed to achieve optimum device results, as well as strategies for integrating these incompatible substances. For a piezoresistive element, we have used a rare-earth monochalocogenide, samarium selenide. In thin film form, this gives a large dynamic range with pressures of a few GPa (1). Lead titanates were the basis for the piezoelectric films. Initial results have been obtained using commercial PZT films. Capabilities for more advanced piezoelectrics are underway, with a recently developed pathway to wafer-scale fabrication of PMN-PT by chemical solution deposition (2). Of course, combining an oxide piezoelectric with a rare-earth piezoresistor in one device creates an additional level of difficulty. This talk will also report electrical results for preliminary devices. 1) M. Copel et al, Nano Letters 13 (10), 4650-4653 (2013). 2) R. Keech et al, J. Appl. Phys. 115, 234106 (2014).

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications