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P4.09 - The PiezoElectronic Transistor: Forcing Materials to Switch 
Date/Time:
April 8, 2015   10:45am - 11:15am
 
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A piezoelectric can create enough pressure to drive a piezoresistive film from an insulating to a conductive state. If we combine these components into a monolithic device, the result is a PiezoElectronic Transistor (PET). This talk will focus on the experimental realization of the PET, describing both progress and challenges. I will discuss the high-performance materials needed to achieve optimum device results, as well as strategies for integrating these incompatible substances. For a piezoresistive element, we have used a rare-earth monochalocogenide, samarium selenide. In thin film form, this gives a large dynamic range with pressures of a few GPa (1). Lead titanates were the basis for the piezoelectric films. Initial results have been obtained using commercial PZT films. Capabilities for more advanced piezoelectrics are underway, with a recently developed pathway to wafer-scale fabrication of PMN-PT by chemical solution deposition (2). Of course, combining an oxide piezoelectric with a rare-earth piezoresistor in one device creates an additional level of difficulty. This talk will also report electrical results for preliminary devices. 1) M. Copel et al, Nano Letters 13 (10), 4650-4653 (2013). 2) R. Keech et al, J. Appl. Phys. 115, 234106 (2014).
 


 
 
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