Keyword Suggestions

Results
 
 
Account Login
 
 
 
 
 

Library Navigation

 
 

Browse Meetings

 
 
 
MM2.07 - Crystal Engineering of Bulk p/n Heterojunction by Complementary Hydrogen Bonding 
Date/Time:
April 7, 2015   4:00pm - 4:15pm
 
Taxonomy
 
 
 
Share:
 

Molecular packing and morphology of organic semiconductors in the solid state are some of the most crucial yet the most unpredictable parameters controlling the performance of organic electronics. I will describe a new strategy for controlling the co-assembly of p- and n-type organic semiconductors through complementary hydrogen bonding. The dipyrrolopyridine heterocycle is introduced as a p-type (donor) semiconductor component capable of complementary H-bonding with naphthalenediimides (acceptor).[1,2] I will show that the H bonding self-assembly process (i) modulates the charge transfer interactions between the donor and acceptor, (ii) allows for precise control over the heterojunction structure and (ii) leads to a combination of the charge-transport properties of the individual components. These studies provide a foundation for advanced solid state engineering in organic electronics, capitalizing on the complementary H-bonding interactions. [1] H. T. Black, D. F. Perepichka, Angew. Chem. Int. Ed. 2014, 53, 2138-2141 [2] H.T. Black, H. Lin, F. B�langer-Gari�py, D.F. Perepichka, Faraday Discuss. 2014, DOI: 10.1039/C4FD00133H
 


 
 
Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this
 



Submit
 
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications