Keyword Suggestions

Account Login

Library Navigation


Browse Meetings

MM1.01 - Large Area Formation of Self-Aligned Crystalline Domains of Organic Semiconductors on Transistor Channels using a Novel Crystallization Technique: CONNECT 
April 7, 2015   8:30am - 8:45am

The electronic properties of solution-processable small molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost, large area, flexible, and transparent electronic applications such as displays, RFID tags, and integrated logic circuits. In order for these applications to be realized, nucleation and crystallization of OSCs must be carefully controlled so that the OSCs are patterned and precisely registered to within the transistor channel with uniform device properties over a large area�a task that that remains a significant challenge. In this presentation, we introduce a novel nucleation and crystallization technique known as CONNECT (Controlled OSC NucleatioN and Extension for CircuiTs) that utilizes differential surface energy and solution shearing to induce nucleation and crystal growth at specific points, resulting in self-patterned and self-registered OSC film within the channel region with well-aligned crystalline domains. The well-aligned crystals with minimal grain boundaries over the channel region resulted in low variability in device-to-device characteristics over a large area with average on-current density of 0.4 ?A/?m and on/off ratio of 6.15 x 10(3). We have fabricated transistor density as high as 840 dpi, with a yield of 99%, previously unseen in literature. We have also built various logic gates and a 2-bit half adder circuit to demonstrate the feasibility of our technique in generating large-scale electronic circuits in a facile and economical manner.

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications