Keyword Suggestions

Results
 
 
Account Login
 
 
 
 
 

Library Navigation

 
 

Browse Meetings

 
 
 
L4.09 - Self-Running Micro-Droplets of Liquid Metal with Record Speed on a Race Track 
Date/Time:
April 8, 2015   4:30pm - 4:45pm
 
Taxonomy
 
 
liquid 
 
 
 
Share:
 

We describe a new approach to self-running micro-scale droplets of liquid metal that results in velocities ~20 cm/s, which is higher than any reported velocity for liquid metals. The technique works by first depositing and patterning metal films on glass slides. These films serve as the �race track� onto which liquid metal droplets run. Droplets of eutectic gallium indium (EGaIn) in acidic solutions spontaneously wet these films, resulting in capillary forces. The solid films dissolve into the liquid metal and the droplets run rapidly along the surface due to the capillary forces. The capillary forces are sufficient to delaminate the films. Our results suggest this delamination process is critical for the incredibly large velocities. The liquid metal drop runs with velocities up to 20 cm/sec which is orders of magnitude higher than any reported velocity of metal drops, and the kinetic energy of our liquid metal drops is orders of magnitude higher than that of any running liquid drops. This system is easy to prepare, does not require special surface treatment, and works effectively in ambient temperature and pressure.
 


 
 
Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this
 



Submit
 
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications