Keyword Suggestions

GG3.07 - Atomistic Simulations of Proteins Interacting with Gold Surfaces and Nanoparticles 
April 8, 2015   10:30am - 11:00am

The interface between proteins and, extended or nanostructured, inorganic surfaces, is the key element of several current and potential biotechnological applications. For example, redox enzymes may be supported on electrodes, to create biofuel cells able to use fuel other than hydrogen [1]; peptides able to specifically bind a given surface have the potential to guide the self-assembling of nanosystems [2]. In a more biologically-oriented context, the interaction of amyloidogenic proteins with surfaces and nanoparticles is being investigated to understand how such interaction may affect the misfolding and fibrillation process [3]. Bare and functionalized gold surfaces, and gold nanoparticles, are particularly relevant in these frameworks. Au surfaces are often used for electrodes or to support self-assembled monolayers. Au nanoparticles are relatively cheap, can be synthesized with a good control of shape, size, and functionalization, and present useful optical properties. We have developed and applied tools for the atomistic simulations of the interaction of proteins and peptides with various surfaces of gold [4,5], including functionalized ones, and with gold nanoparticles [6,7]. In this talks, such tools will be introduced and some examples of their applications relevant for material science (e.g., enzymatic biofuel cells [8]) and nanobiotechnology (e.g., interaction of gold nanoparticles with amyloidogenic proteins/peptides [7]) will be presented. [1] Cracknell, J. A. et al. Chem. Rev. 108, 2439 (2008) [2] Sarikaya, M., et al. Nature Mater. 3, 577 (2003) [3] Linse, S., et al. PNAS 104, 8691 (2007) [4] Iori, F. et al. J. Comp. Chem. 30, 1465 (2009) [5] Wright, L. et al. JCTC 9, 1616 (2013); JPC C 117, 24292 (2013) [6] Brancolini, G. et al. ACS Nano 6, 9863 (2012) [7] Brancolini, G. et al. Nanoscale 6, 7903 (2014) [8] Zanetti-Polzi, L. et al. JACS 136, 12929 (2014)

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications