Keyword Suggestions

E1.05 - Influence of Lamination Process and Materials on the Residual Stress in the Silicon Solar Cells as Revealed by Synchrotron X-Ray Microdiffraction 
April 7, 2015   11:00am - 11:15am

In this study, we investigate the effect of two polymer encapsulation with different material properties such as Young�s modulus (E), yield strength etc...on the residual stress gradients of silicon. We observe through synchrotron X-ray microdiffraction that, solar photovoltaic (PV) module laminated with encapsulants A and B which have Young�s modulus of 6.34 and 28.32MPa respectively, reveals distinct variations in residual stress of silicon. The residual stress of silicon near the solder (stress concentration region), showed a maximum quantitative value of ~300 MPa with encapsulant A whereas for the solar PV with encapsulant B, it showed a much higher value of ~450 MPa. Further, this residual mechanical stress and its relation to fracture/crack initiation events of silicon were understood using three point bending tests. The result shows that with encapsulant A, crack initiation of silicon at force of 37KN is observed whereas for the PV with encapsulant B, silicon cracked at much lower force of 10KN. These studies confirm that encapsulant materials have a significant effect on the residual stress of silicon which directly affects the working efficiency and reliability of the solar PV.

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications