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E1.01 - Advanced Functional Materials: Intrinsic and Doped Silicon Oxide 
Date/Time:
April 7, 2015   9:00am - 9:30am
 
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In comparison to other silicon materials, the particular two-phase structure of silicon oxide materials, in which hydrogenated microcrystalline silicon crystallites are surrounded by an oxygen-rich hydrogenated amorphous silicon phase, causes them present excellent photoelectrical material properties, such as a low-parasitic absorption in broadband spectral range, independent controllability of longitudinal and lateral conductivity, refractive indices (3.5-2.0), band gap (2.0-2.6 eV) and conductivity tenability (with orders of 1-10-9 S/cm) with oxygen doping, and so on. Various types of silicon oxide materials, including intrinsic, p- or n- type, applied in thin film solar cells have also played significant roles in improving the efficiency of various types of single-, dual-, and triple-junction thin-film solar cells from both the optical and electrical points of view. In this paper, we present our latest progress in studying the performance improvement role of intrinsic or doped silicon oxide materials in pin-type a-Si:H, a-SiGe:H, and ?c-Si:H single-junction solar cells. By effectively tuning the band gap values of intrinsic a-SiOx:H materials with oxygen doping and adopting the layers with a suitable band gap (1.86 eV) as the P/I buffer layers of a-Si:H solar cells fabricated on metal organic chemical vapor deposition boron-doped zinc oxide substrates, a significant Voc increase up to 909 mV and an excellent external quantum efficiency response of 75% at 400 nm typical wavelength can be achieved by matching the band gap discontinuity between the p-type a-SiOx:H window and a-Si:H intrinsic layers. The high leakage current characteristics of pin-type narrow-gap (Eg
 


 
 
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