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CC11.09 - Polycrystalline-Silicon Ferroelectric Memory Thin-Film Transistors with a Large-Single Grained Pb(Zr,Ti)O3 
Date/Time:
April 9, 2015   4:00pm - 4:15pm
 
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memory 
 
 
 
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We have successfully fabricated metal-ferroelectric-insulator-silicon (MFIS)-type memory thin-film transistors (TFTs) with a large single-grained Pb(Zr,Ti)O3 (PZT) on glass substrate. The single-grain of (PZT) was obtained by separating the temperature of nucleation and growth. An artificially controlled nucleation seeds were formed in a 40 ?m row and the location of polycrystalline-silicon (poly-Si) channel were 10 ?m offset from the nucleation seeds. The growth of the PZT seeds was carried out by post-annealing until the single-grained covers the poly-Si channel. The device exhibits a good performance in terms of large memory window (3.5 V), ultra-fast programming and erasing (P/E) switching, long data retention, and an excellent P/E fatigue cycles. Comparing with the poly-grained MFIS-type memory (TFTs), the single-grained MFIS-type TFTs showed a high reliability performance due to its non-grain boundary effect. As a result, achieving a single-grained PZT is a important factor for high performance of ferroelectric memory transistors and useful for the display applications.
 


 
 
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