Keyword Suggestions

Results
 
 
Account Login
 
 
 
 
 

Library Navigation

 
 

Browse Meetings

 
 
 
rating
C7.05 - A Universal Low-Temperature One-Step Solution Processing Method for the Deposition of Large-Area Organometallic Halide Perovskite Thin Films for High-Performance Multifunctional Photovoltaics 
Date/Time:
April 9, 2015   11:45am - 12:00pm
 
Speaker:
 
Taxonomy
 
 
 
Share:
 

A new-generation of thin-film photovoltaics have emerged in the past two year with the introduction of solution-processable organometallic halide perovskites (e.g. CH3NH3PbI3) as light absorbers. Owing to the extraordinary crystallization kinetics of such organic-inorganic hybrid perovskites from precursor solutions at elevated temperatures of about 70 to 150 oC, the reproducible deposition of high quality perovskite thin films has been a challenge. To address this issue, we describe here a universal low-temperature one-step solution processing method which enables the deposition of organometallic halide perovskite thin films with superior uniformity over square-centimeter area and smoothness at the nanometer scale. Using this method, CH3NH3PbI3-based photovoltaics can be reproducibly fabricated with high efficiencies up to 15%. It is also demonstrated that ultrathin perovskite films with thickness below 100 nm can form in complete coverage on substrates and their based full devices deliver surprisingly high efficiency, which are promising for building-integrated photovoltaic applications with low lead levels. Furthermore, partial or full substitution of iodine with bromine in the precursor solution allows band-gap tuning of the perovskite thin films, resulting in tunable vivid colors in the solar cells for potential application as decorative or tandem photovoltaics. The simple and mild deposition conditions used here also expand the selection of materials used in electron/hole selective layers and substrates. This makes the resulting solar cells more versatile in terms of multifunctionality and the types of fundamental studies that can be carried out. This new solution-processing method for the deposition of organometallic halide perovskite thin films is potentially low-cost, considering the low temperature, ambient pressure and one-step nature involved. Also, the rapid perovskite conversion from precursor solutions makes this process amenable to roll-to-roll continuous fabrication and automation for high throughput manufacturing.
 


 
 
Average Rating: (1 Rating)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this
 



Submit
 
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications