Keyword Suggestions

C4.07 - Fully Printable Perovskite Solar Cells with TiO2/ZrO2/NiO/Carbon (CH3NH3PbI3) Structure 
April 8, 2015   11:15am - 11:30am

With rapid increase of efficiency from 3.8% to 17.9%, hybrid organic-inorganic perovskite solar cells have attracted much attention because of the excellent properties of organo-lead halide perovskite materials, which makes perovskite solar cells to be a promising candidate of next generation photovoltaic technology. However, the employment of organic hole transport materials and noble metal counter electrode increased its material cost and added the complexity of manufacture process, which has been regard as a potential hurdle for large-scale production and practical application. It is desirable to develop perovskite solar cells using low-cost materials with simple manufacturing process. Here, we reported perovskite heterojunction solar cells, fabricated with fully screen printing method in atmosphere environment using mesoporous TiO2 as electron transport layer, mesoporous ZrO2 as spacer layer and mesoporous NiO as active interfacial layer, respectively, whose pore was penetrated perovskite (CH3NH3PbI3) as light absorber, achieving a promising power conversion efficiency of 12.4% when measured under AM1.5G illumination. This fully printable device with all-inorganic materials offers a viable pathway to develop efficient low-cost solar cells with attractive properties for scale up and practical applications.

Average Rating: (1 Rating)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications