Keyword Suggestions

Results
 
 
Account Login
 
 
 
 
 

Library Navigation

 
 

Browse Meetings

 
 
 
C12.05 - Achieving High Efficiencies for Planar Heterojuction Formamidinium Lead Iodide Perovskite Solar Cells in Controlled Humid Environments 
Date/Time:
April 10, 2015   2:30pm - 2:45pm
 
Speaker:
 
Taxonomy
 
Share:
 

Perovskite solar cells (PSCs) have attracted much attention in recent years. Their metal halide composition holds the promise of achieving highly efficient and cost effective devices due to high quality crystalline perovskite thin films with tunable absorption edge and high extinction coefficient. Fully solution processed devices are advantageous for future large-scale industrial applications. Methylammonium lead iodide (MAPbI3) with a bandgap of 1.55 eV and an absorption onset in the near infra-red (800 nm) is mostly investigated for PSCs since it can absorb photons in both visible and near-infrared solar spectrum. Furthermore, its capability of acting simultaneously as a hole conductor and electron transporter makes it suitable for planar heterojuntion PSCs. Recently, it was observed that replacing the methylammonium cation (CH3NH3+) by a formamidinium cation (CH(NH2)2+) in the lead iodide perovskite lead to a decreased band gap value (1.47 eV) and a shift in the absorption edge to 850 nm of the perovskite thin film. In this research, we report the fabrication of a high efficiency planar heterojuction formamidinium PSCs. The device architecture is defined by a fluorine-doped tin oxide glass substrate coated with a titanium dioxide (TiO2) thin film, a FAPbI3 absorber layer, a 2,2,7,7-tetrakis(N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene (spiro-OMeTAD) hole transporting layer and silver electrodes. The purity and quality of the perovskite thin film were determined by UV-vis spectroscopy, X-rays diffraction (XRD) and energy diffraction spectroscopy (EDS). Field emission scanning electron microscopy (FE-SEM) was used to characterize the morphology of the absorber layer. Furthermore, the device performances were studied as a function of the relative humidity (RH) (%).The impact of RH content on the device characteristics and charge carrier dynamics will be discussed. The stability of FAPbI3 based films and devices will be compared to those based on MAPbI3.
 


 
 
Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this
 



Submit
 
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications