Keyword Suggestions

Results
 
 
Account Login
 
 
 
 
 

Library Navigation

 
 

Browse Meetings

 
 
 
AA9.05 - N-Type Polymer-Enabled Selective Dispersion of Semiconducting Carbon Nanotubes for Flexible CMOS-Like Logic Circuits 
Date/Time:
April 9, 2015   11:45am - 12:00pm
 
Speaker:
 
Taxonomy
 
 
 
Share:
 

Single-walled carbon nanotubes (SWNTs) have been widely studied for their applications in transistors and logic circuits due to their excellent electronic properties. However, as-synthesized SWNTs are mixtures of semiconducting SWNTs and metallic SWNTs, hindering their practical deployment in semiconductor-based electronics. Sorting of SWNTs by conjugated polymers (e.g. polythiophene) is of particular interest because of its simplicity, high selectivity and high-yield. Here, we demonstrated the use of high-mobility n-type (electron-transporting) polymer for sorting of high-purity semiconducting SWNTs. The high selectivity of semiconducting SWNTs with n-type polymer is confirmed by Raman spectroscopy, dielectric force spectroscopy and transistor characterizations. In addition, our selected SWNTs have large-diameters than polythiophene-sorted SWNTs and hence are more desirable for electronic applications. Furthermore, by using high-mobility n-type polymer for sorting, we achieved ambipolar SWNT transistors with enhanced electron transport in comparison to polythiophene-sorted SWNTs, even on the flexible substrate. As a result, the ambipolar transistor characteristic allows the fabrication of negated AND (NAND) and negated OR (NOR) logic circuits from the same set of transistors, without the need for doping. The use of n-type polymer for sorting semiconducting SWNTs as well as using the resulting ambipolar SWNT transistors for CMOS-like logic circuits greatly simplify the fabrication of flexible SWNT logic circuits.
 


 
 
Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this
 



Submit
 
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications