Keyword Suggestions

AA10.11 - Fermi Level Pinning in Metal/Al2O3/InGaAs Gate Stack 
April 9, 2015   4:45pm - 5:00pm

In0.53Ga0.47As is considered as one of the most attractive semiconductors for high electron mobility channels complementary metal oxide semiconductor transistors. Fixed charges and traps (e.g. border traps) within the oxide layer, and trap states produced by defects at the Al2O3/InGaAs interface were found in many studies of Al2O3/InGaAs gate stacks. Post oxide deposition annealing and post metal deposition annealing help in improving the quality of the Al2O3/InGaAs system by reducing the above mentioned traps and charges. In this study the effect of post metal deposition annealing on the effective work function (EWF) in metal/Al2O3/InGaAs gate stacks was investigated. Al2O3 was deposited by thermal atomic layer deposition (ALD) using a standard trimethylaluminum/H2O process on n-type InGaAs(100) substrates. The samples were then annealed at 400�C for 30 min in vacuum (P

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Kinetics and Structure of Nickelide Contact Formation to InGaAs Fin Channels
Recent Progress in Understanding the Electrical Reliability of GaN High-Electron Mobility Transistors
The Effect of ALD Temperature on Border Traps in Al2O3 InGaAs Gate Stacks
Atomic Layer Deposition of Crystalline SrHfxTi1-xO3 Directly on Ge (001) for High-K Dielectric Applications