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Tutorial T: Fundamentals of Wide-Bandgap Materials and Devices for Optoelectronics and Power Electronics 
November 30, 2014   8:30am - 5:00pm
  Synced Audio / Video / Slides

  • Victor Veliadis: The opening segment of the tutorial will outline the advantages of SiC over conventional power electronics materials and will introduce the SiC devices currently developed for power applications. Aspects of fabrication of SiC devices will be presented with an emphasis on the processes that do not carry over from the mature Si power device world, and are thus tailored to SiC. Common SiC device edge termination techniques, which are crucial in achieving the high voltage-potential of SiC, will be presented. Fabrication yields and wafer parameter uniformity will be discussed in relation to manufacturability. The materials and processing challenges of fabricating large-area SiC devices will be outlined and an exemplary wafer interconnection technique will be described. Thermal performance of SiC devices will be presented. Reliability of SiC devices will be reported, focusing on hard switching and unclamped inductive load testing.
  • Matteo Meneghini: Over the last few years, GaN-based High Electron Mobility Transistors (HEMTs) have demonstrated excellent performance in terms of on-resistance and breakdown voltage. Moreover, these devices can reach very high switching frequencies (>40 MHz) and can therefore be used for the fabrication of high efficiency power conversion systems; converters with efficiencies in excess of 99% have already been demonstrated, thus supporting the superiority of GaN with respect to conventional technologies. However, several factors still limit the performance and the lifetime of these devices. The tutorial will describe the fundamentals of GaN-based power transistors, as well as the physical mechanisms that limit their performance and reliability.
  • Hiroshi Amano: This segment will cover a wide range of material and device topics related to III-N-based optoelectronics. An overview will present the III-N optoelectronics market view, the history of the development of nitride-based optoelectronics, and the fundamental electrical and optical properties of nitrides. Next, key elements of the growth of nitrides by MOVPE will be covered, including thermodynamics, computational fluid dynamics, quantum chemical analysis, growth on various substrates (sapphire, Si, SiC, GaN), and in-situ monitoring of the growth process. Crystal characterization, device fabrication processes, and performance-determining processes will be covered next. The tutorial will conclude by reviewing the present status and future trends of nitride-based optoelectronics, covering the following topics: Visible long wavelength LEDs, deep UV LEDs, laser diodes, photodetectors and photovoltaics.

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