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K4.02/J3.02 - High-Sensitivity Optoelectronics with Van der Waals Heterostructures 
Date/Time:
December 1, 2014   4:00pm - 4:30pm
 
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The enormous impact of graphene on both fundamental science and potential device applications has rejuvenated interest in other layered materials as well, where individual atomic or molecular layers are weakly coupled through Van der Waals forces. A recent development in this field involves multi-component two-dimensional hybrids obtain via vertical stacking of different layered materials. Hybrid heterostructures of atomically thin membranes with clean interfaces promise devices that combine advantages of ultimate miniaturization and multiple functionality. In this work we demonstrate that metal dichalcogenides, such as Molybdenum disulphide (MoS2), can be a natural partner to graphene for novel optoelectronic application because of the visible range bandgap, and gate tunable electrical transport in MoS2. The responsivity of Graphene/MoS2hybrids can be as high as 1010 Ampere/Watt [1], which is nearly thousand times larger than other light-sensitive graphene hybrids. In addition, these devices display persistent photoconductivity that can be exploited to realize programmable optoelectronic switches. I shall outline this emerging concept in material engineering for optoelectronics from Van der Waals heterostructures with examples of different composition and stacking sequences.

References:

[1] Kallol Roy, Medini Padmanabhan, Srijit Goswami, T. Phanindra Sai, Gopalakrishnan Ramalingam, Srinivasan Raghavan, and Arindam Ghosh, Nature Nanotechnology 8, 826 (2013).
 


 
 
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