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UU4.04 - Indium Phosphide Nanowire Network Grown on Transparent Conductive ZnO: Al Films for Thermoelectric Devices 
April 23, 2014   9:00am - 9:15am

Growing semiconductor nanowires on an electrically conducting surface on a non-single crystal substrate enables us to design new device structures. For instance, aluminum doped zinc oxide (ZnO:Al) thin films can be sputtered on virtually any chemically and mechanically stable solid surfaces. Given ZnO:Al, our unique material system for thermoelectric applications can be based on randomly oriented and intersecting indium phosphide (InP) nanowire networks grown on ZnO:Al thin films. This structure can establish reliable electrical contact to InP nanowires and be utilized to fabricate working thermoelectric devices at low process and material costs because no single-crystal substrates are necessary. In this paper, we studied a material platform consisting of InP nanowire networks on ZnO:Al thin films. ZnO:Al thin films were deposited using radio frequency magnetron sputtering on various non-single crystalline substrates, and then dense InP nanowire networks were grown by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) with gold catalyst. X-ray diffraction and scanning electron microscope were employed for characterization of the samples. Optical properties of the samples were studied by photoluminescence and Raman spectroscopy at room temperature. The photoluminescence emission shows symmetric shape and redshift in comparison to those grown on Si. Possible Zn diffusion into the nanowires will be discussed.

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Keynote Address
Panel Discussion - Different Approaches to Commercializing Materials Research
Business Challenges to Starting a Materials-Based Company
Fred Kavli Distinguished Lectureship in Nanoscience
Application of In-situ X-ray Absorption, Emission and Powder Diffraction Studies in Nanomaterials Research - From the Design of an In-situ Experiment to Data Analysis