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UU2.05 - The Influence of Doping and Defects on the Electrical and Electromechanical Behavior of Nanowire Devices 
Date/Time:
April 22, 2014   3:30pm - 4:00pm
 
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Defect engineering is important frontier in nanostructured materials. For example, modulation of doping to form heterojunctions provides function to most semiconductor devices, and this is expected to be the case for nanowires as well. We will first describe the influence of axial and radial dopant distributions on the behaviors of p-n and metal-semiconductor junctions in nanowires by correlating atom probe tomography with scanning photocurrent microscopy, Kelvin probe force microscopy, and device simulations. We will then describe new investigations into the dynamic mechanical behaviors of vanadium dioxide nanowires around the insulator to metal transition. We will explore the influence of localized defects on nanomechanical resonators with potential applications in new classes of sensors and oscillators.
 


 
 
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