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UU1.03 - Solvent Vapor Growth: A Versatile Glassware Approach to the Formation of Silicon, Germanium and Axial Silicon-Germanium Heterostructure Nanowires Using Low Solubility Liquid Catalysts 
Date/Time:
April 22, 2014   8:45am - 9:00am
 
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The growth of Sn seeded Si and Ge nanowires in high density directly from an evaporated catalyst layer on stainless steel is reported. Nanowire growth was achieved in low cost glassware apparatus using the vapor phase of a high boiling point organic solvent as the growth medium. The nanowires are single crystalline with predominant <111> growth directions. High resolution transmission electron microscopy, dark field scanning transmission electron microscopy and energy dispersive X-ray analysis are used to elucidate the interface between the seed and the nanowire. The growth method was then extended to the formation of Si/Ge axial heterostructure nanowires using the versatile wet chemical approach. The growth method exploits the low solubility of Si and Ge within the Sn catalyst material to produce abrupt heterojunctions characterized using aberration corrected scanning transmission electron microscopy and atomic level electron energy loss spectroscopy. Additional analysis focussed on the role of crystallographic defects in determining interfacial abruptness and the preferential incorporation of metal catalyst atoms near twin defects in nanowires.1. Emma Mullane, Tadhg Kennedy, Hugh Geaney, Calum Dickinson, and Kevin M. Ryan, 25 (9), 1816-1822 2. Hugh Geaney, Emma Mullane, Quentin M. Ramasse, and Kevin M. Ryan, 13 (4), 1675-1680
 


 
 
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