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R2.08 - Output Power Enhancement of Flexible ZnO Nanogenerator By a CuO-ZnO P-N Junction Formation 
Date/Time:
April 22, 2014   4:30pm - 4:45pm
 
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Among several piezoelectric materials, ZnO has been considered as one of the most promising candidates for the realization of nanogenerator due to their nontoxicity and cost effectiveness by comparison to other materials. However, the performance of ZnO piezoelectric nanogenerator (NG) has been limited largely due to excessive electrons existing in ZnO, which screens piezoelectric potential generated by mechanical deformation of the crystal structure. Nominally undoped intrinsic ZnO exhibits n-type behavior due to defect levels induced by interstitials and oxygen vacancies, leading to Fermi level close to the conduction band edge. Thus, large excessive electrons can be easily found even at room temperature. To alleviate this issue, several attempts have been made up to date. In our report, as an alternate solution, we investigated CuO, p-type metal oxide semiconductor with a bandgap of 1.35 eV, to form a metal oxide only CuO-ZnO p-n junction, where CuO naturally demonstrates p-type behavior due to cation-deficiency, acting as a hole conductor. In this approach, we demonstrated greatly enhanced piezoelectric energy conversion performance of ZnO flexible piezoelectric NG, exhibiting 7-fold higher output voltages and one order of magnitude higher output currents by comparison to the devices without CuO layer.
 


 
 
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