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OO14.06 - Using Nitrogen Seeded SiC to Produce a Wide-Bandgap Semiconducting Form of Graphene 
Date/Time:
April 24, 2014   11:45am - 12:00pm
 
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The quest to develop graphene electronics remains hindered by the inability to make a semiconducting form of graphene suitable for room temperature devices. By far the widest band gaps have been generated by chemical functionalization but the intrinsic disorder in the functionalized graphene and the instability of the absorbate at moderate temperatures has proven a challenge. In this talk I will discuss a completely new method to functionalize graphene. Rather than bonding atoms or molecules to the graphene post-growth, we use a predefined nitrogenated SiC surface as a template for graphene growth. Starting from a high temperature-stable sub-monolayer coverage of nitrogen on SiC, the sample is heated to the graphene growth temperature. The nitrogen graphene (NG) that grows from this surface is a wide gap form of graphene that is stable up to at least 1400C. Using angle resolved photoemission, we measure the valance band maximum of the gap to be 0.7eV below EF meaning that the gap is >0.7eV. I will discuss how the nitride surface is prepared and how the semiconducting graphene is formed and characterized. I will also show how scalable bottom-up NG ribbons, seamlessly connected to metallic graphene, can be grown from this material. The NG ribbons offer a direct application as a channel material for high voltage SiC FETs.
 


 
 
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