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OO14.04 - Wafer Scale Monolayer Single-Domain Graphene 
Date/Time:
April 24, 2014   11:15am - 11:30am
 
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The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on (0001) SiC via graphitization of the surface has a single orientation, but its thickness cannot be easily limited to one layer. We describe a method in which a graphene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a nickel film and transferred to another substrate. Using the binding energy contrast among graphene and different materials, we selectively removed excess random graphene layers from monolayer graphene by using a gold film. This shows one can “fix” the transferred graphene by removing any excess, leaving only a single layer on the substrate. Two-step exfoliation process applied on a graphitized 4-inch SiC wafer resulted in the formation of a monolayered single-domain graphene in a 4-inch wafer scale. Remarkably, structural and electrical characterizations show that the graphene sheet maintains its high quality during the repeated growth/transfer processes with a single SiC wafer. These results constitute significant progress toward low-cost fabrication of a wafer-scale, oriented graphene on conventional semiconductor wafers for hybrid integrated circuits applications and show a potential for manipulation of two-dimensional materials with a single-atom-thickness precision.
 


 
 
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