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OO9.05 - A Facile Room Temperature Method on Preparation of N-Doped Reduced Graphene Oxide Field Effect Transistor 
Date/Time:
April 23, 2014   9:30am - 9:45am
 
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Reduced graphene oxide (rGO) obtained from graphene oxide (GO) via chemical reduction is a promising material for electronic applications. To produce the high quality rGO, people have already tried various reagents in the reducing process. Hydrazine hydrate and hydroiodic acid are the most popular ones among the reductants in the conventional methods. But it’s necessary to heat up the reaction solution to a certain temperature to overcome the activation energy barrier. However, until now, researchers are still looking forward to the room temperature reduction and in situ nitrogen doping of rGO for the complete electronic circuit. Here we introduce a new room temperature reducing method to prepare highly nitrogen doped reduced graphene oxide (rGO) and the in situ n-type rGO field effect transistors (FETs). The ethylenediamine (EDA) is meticulously chosen for the reduction system. It should be liquid state as a solvent under the room temperature and act a strong base with di-amino terminal groups to accept the solvated electrons from the alkali metal, lithium. The Li-EDA has both of reducibility and nucleophilicity which is supposed to bring the competition reactions from the reduction and the substitution. With the help from the Li reductant and the EDA solvent, we could easily access the Li-rGO and the n-type doping rGOFET under the room temperature by just dipping the pre-made GO channel device into the reductant solution for a short while. After the dipping process, both of the Li and the EDA could be easily removed from the surface just by quenching and rinsing with de-ionized (DI) water and ethanol.This is the first known achievement of the room temperature spontaneous reduction and in situ substitution N-doping of rGO. It’s a very convenient and important process for the future industrial mass production of rGO and rGO based electronics.
 


 
 
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