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OO1.01 - Electronic-Mechanical Coupling in Graphene from in situ Nanoindentation Experiments and Multiscale Atomistic Simulations 
Date/Time:
April 21, 2014   10:30am - 11:00am
 
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Graphene’s high electron mobility, scalability and excellent thermal conductivity make it a promising semiconductor candidate for post-CMOS electronic devices. We performed in situ nanoindentation to induce uniaxial tensile strain in suspended graphene devices and simultaneously measured electronic transport properties. We found Young’s modulus to be ∼335 N/m, consistent with previous reports and our atomistic simulation results. Electrical measurements indicate the gauge factor of ∼1.9, comparable to the 2.4 predicted by simulations. Our transport measurements reveal that a moderate uniaxial strain is not capable of opening a band gap in graphene and does not affect its carrier mobility. This result matches our first principle-based MD simulations, as well as other theoretical predictions. The implications are that unlike for many other CMOS devices, mechanical strain, which can be easily controlled through device fabrication, is not an effective means to alter electronic transport properties in graphene.
 


 
 
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