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LL6.03 - F-Doped SnO Transparent Conducting Thin Films via Nanoscale Aqueous Tin (II) Hydroxide Nitrate Cluster Precursors 
Date/Time:
April 23, 2014   8:45am - 9:00am
 
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Solution processing is an effective, low-cost means of depositing transparent conducting oxide thin films for large-area functional devices used in energy and information applications. However, the traditional solution processing methods are limited in their ability to create dense films at low-temperatures with good electrical properties because they use organic solvents, excess counter-ions, and stabilizing materials, producing porosity in the final film when combusted. Water-based nanoscale cluster precursors with minimum counterions and no organic ligands are promising “ink-precursors” for depositing high-quality and dense inorganic oxide films [1]. Here we present the synthesis of an aqueous thin-film precursor based on F-doped tin(II) hydroxide nitrate clusters and detailed characterization of these precursors for the deposition of F-doped SnO thin films [2]. This precursor enables the deposition of thin films at low-temperatures, facilitating the deposition of conducting F:SnO films on flexible plastic films. F acts as both a stabilizing ligand for the aqueous precursor and a functional electronic dopant. The resulting films are amorphous at low temperatures and become polycrystalline when annealed at 300 C or above. Annealing at 450 C causes only a 9% shrinkage in thickness and yields a dense, uniform, and crack-free film, which is consistent with the solution precursor containing minimum counterions. XPS and quartz crystal microbalance (QCM) results indicate that when the annealing temperature reaches approximately 250 C, all counter ions are removed, with less than a 30% reduction in mass. The lowest electrical resistivity of 1.5 × 10 Ωm was obtained from 10 atomic percent F-doped SnO films annealed at 600 C in air, yielding a Hall mobility of 4.2 cm/Vs and a carrier concentration of 9.5 × 10 cm. The films deposited on polyimide sheets showed stable electrical properties as a function of folding cycles, verifying that these films are mechanically robust and well-anchored. This new aqueous Sn precursor allows for creating variety of functional mixed-metal-oxide films by combining with other aqueous cluster species (e.g., of In, Ga, Al, Zn). (1) Mensinger, Z. L.; Gatlin, J. T.; Meyers, S. T.; Zakharov, L. N.; Keszler, D. A.; Johnson, D. W. Angew. Chem. 2008, 47, 9484. (2) Nadarajah, A.; Carnes, M. E.; Kast, M. G.; Johnson, D. W.; Boettcher, S. W. Chem. Mat. 2013, 25, 4080.
 


 
 
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