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HH5.06 - High Speed, High Temperature Electrical Characterization of Meta-Stable Phases and Crystallization Dynamics of GeSbTe 
April 23, 2014   4:45pm - 5:00pm

Phase change memory (PCM) is the most recent non-volatile memory technology in the marketplace as a flash memory alternative and has the potential to become a non-volatile DRAM replacement. PCM devices work based on electrical resistivity contrast between highly resistive amorphous and highly conductive crystalline phases of phase change materials. A small volume of a phase change material (active region) switches between amorphous and crystalline phases by suitable electrical pulses. These devices experience melting and resolidification in nanoseconds time-scale and their active region reaches ~ 1000 K during the operation. Hence, high-speed and high-temperature characterization of these materials is crucial. In this study a set of high-speed high-resolution and long duration electrical measurements were performed on nanoscale GeSbTe (GST) line cells in a 125 K- 673 K temperature range. Electrical resistivities of metastable amorphous (above ~400 K) and metastable fcc (face centered cubic) (above ~550 K) GST were extracted. The resistance drift in amorphous phase in 250 K - 500 K temperature range and crystallization dynamics immediately after amorphization at elevated temperatures are characterized. Details of the measurement technique and results will be presented.

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Keynote Address
Panel Discussion - Different Approaches to Commercializing Materials Research
Business Challenges to Starting a Materials-Based Company
Fred Kavli Distinguished Lectureship in Nanoscience
Application of In-situ X-ray Absorption, Emission and Powder Diffraction Studies in Nanomaterials Research - From the Design of an In-situ Experiment to Data Analysis