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E6.01 - Photoluminescence in CZTS: Polycrystalline vs Epitaxially-Grown Materials 
Date/Time:
April 23, 2014   8:30am - 8:45am
 
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We compare the photoluminescence (PL) characteristics of co-evaporated Cu2ZnSnS2 (CZTS) films with two types of microstructures: (1) polycrystalline films grown onto Mo-coated glass and annealed under sulfur overpressure (as in high-efficiency devices) and (2) large-grained (~10 μm diameter) epitaxial material grown on p+ Si substrates (device efficiency measurements underway). The epitaxial material is nearly stoichiometric in composition and a range of compositions of polycrystalline material have been characterized. In the epitaxial samples, intensity-dependent PL spectra at 4K contain a low-energy defect peak and a higher-energy shoulder. This is qualitatively similar to what is seen in polycrystalline CZTS samples. However, the lifetime of the defect recombination in epitaxial samples is ~tens of nanoseconds, compared to the ~10 microsecond lifetime of defect recombination in polycrystalline CZTS. We will discuss the reason for this difference in lifetime and compare the defect properties of epitaxial and polycrystalline CZTS.
 


 
 

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