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E4.01 - Heterojunction Interface Design for Earth Abundant Photovoltaic Devices 
Date/Time:
April 22, 2014   3:30pm - 4:00pm
 
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Heterostructure interfaces can play a decisive role in the optoelectronic performance of earth abundant semiconductor absorbers in thin film photovoltaic applications. I will discuss examples from cuprous oxide, zinc phosphide photovoltaic, and Zn-IV nitride semiconductor heterostructures. We examine the dramatic dependence of open circuit voltage on interface stoichiometry at zinc oxide/cuprous oxide interfaces, and the effect of heterostructure design on current transport interfaces between zinc phosphide and ZnS, ZnSe, ZnO and CdS. Approaches to and prospects for low recombination activity interfaces and carrier selective contacts in earth abundant materials will be discussed.
 


 
 
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