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E1.02 - Thin Film WSe for Use as a Photovoltaic Absorber Material 
Date/Time:
April 22, 2014   9:00am - 9:15am
 
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A great deal of interest is being focused on environmentally safe earth abundant materials including iron sulfide (FeS) in the pyrite phase. While promising, iron sulfide is presenting serious material science challenges. In addition the band gap of pyrite is much less than the optimal value of 1.36 eV. Another excellent candidate for an earth abundant absorber material is WSe which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.45 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in to 10-10 cm range and p-type Hall mobilities in the 10 cm/V-s range can be obtained. We employ these results to numerically simulate heterojunction solar cells based on this material, where we will show efficiencies greater than 20% are possible.
 


 
 
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