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BB2.04 - Defects at the Ge/Oxide Interface: Properties and Passivation 
Date/Time:
April 22, 2014   11:30am - 12:00pm
 
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The high hole mobility in germanium has motivated a renewed interest in this semiconductor for future electronic devices. In particular its integration as channel material in Complementary Metal Oxide Semiconductor (CMOS) architectures would improve operation speed. However, many issues still need to be addressed before Ge can be efficiently integrated in high performance MOSFETs. Among them a critical problem is to provide a high-quality interfacial layer. The recent observation by electrically detected electron spin resonance spectroscopy (EDMR) of Pb-like centers at the Ge/GeO2 interface [1-3] allowed a more systematic investigation of the passivation of this technologically relevant interface considering both the Ge(001) and the increasingly attractive Ge(111) orientations. In this work we will report on the characterization of different interfaces produced on both Ge(100) and Ge(111) substrates by Al2O3 direct growth using atomic layer deposition (ALD), and GeO2 and sulfur passivation. We will report EDMR results correlated with admittance spectroscopy of the interface traps, and deep level transient spectroscopy (DLTS) measurements. [1] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 93, 242105 (2008)[2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)[3] S. Paleari, S. Baldovino, A. Molle, M. Fanciulli, Phys Rev. Lett. 110, 206101 (2013)
 


 
 
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