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BB1.04 - Passivation of III-V Oxide Interfaces with Nitrogen 
Date/Time:
April 22, 2014   8:45am - 9:00am
 
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The scaling of logic CMOS devices requires the use of high mobility semiconductor channel materials such as InGaAs. However, the interfaces of III-V and high K oxides such as Al2O3 and HfO2 can still possess a high interface state density, D_it. Various methods have been used to lower this density, such as choice of oxide, and recently the use of nitrogen treatment of the interface. We have calculated that the replacement of the last layer of the III-V by an Al-N layer greatly reduces the interface defect state density, because N-N dimers do not form, N dangling bond states are deep in the valence band and Al dangling bond states lies higher in the conduction band [1]. This result was recently confirmed experimentally [2,3]. Here, we extend these calculations to other III-Vs such as InGaSb and GaSb where a similar behavior is found.1. Y Guo, L Lin, J Robertson, App Phys Lett 102 091 606 (2013)2. T Aoki et al, Tech Digest SSDM (2013) J-8-33. V Chobpattana... S Stemmer, App Phys Lett 102 022907 (2013)
 


 
 
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