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BB1.03 - In, Al, Ga, As Compounds Grown by MOCVD for MOSFET Channel on Blanket and Patterned 300 mm Si (100) Substrates Exhibiting Room Temperature Photoluminescence 
Date/Time:
April 22, 2014   8:30am - 8:45am
 
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Replacing silicon with high-mobility channel materials such as InGaAs will be surely the next evolution of MOSFET devices. Alternative materials such as High-k dielectrics and metal gates have already been successfully introduced. InGaAs based channels hold the promise of circuits operating at lower Vdd and hence consuming low power as the dynamic power roughly scales as V2dd. Two different strategies for integrating As based compounds as MOSFET channels are actually foreseen: fully depleted III-V/On Insulator or FinFET. This integration still faces many challenges like direct III-V epitaxy on Si, channel/high k interface control, and contact resistance.We focus on the direct growth of As compounds on Si(100) 300 mm substrates. GaAs and InGaAs layers are grown by an AMAT MOCVD tool. TMIn, TMGa and TMAl are used as group III elemental precursors whereas TBAs is used as group V elemental precursor. Typical growth temperature ranges between 300 and 700°C and pressure ranges between 1 and several hundred Torr. We have studied the structural and the physical properties of GaAs, InGaAs, AlGaAs layers grown either on blanket or patterned Si(100) wafers by AFM, FIBSTEM, TEM, SIMS, µPL, cathodoluminescence, XRD. We showed an improvement of the material quality as they are elaborated in SiO2 cavity even with an aspect ratio less than 2. Antiphase boundary and dislocation densities are strongly decreased as the width of the cavity goes bellow 100 nm. By adjusting properly the growth conditions and the stack in the quantum well structure, we were able to observe room temperature micro-photoluminescence of single InGaAs QW, with In composition ranging between 10 and 53% and a total stack thickness well below 1 µm.
 


 
 
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