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A2.04 - Structure-Property Relationships in a-SiC:H Dielectric Materials and the Predictive Power of Constraint and Bond Percolation Theory 
Date/Time:
April 22, 2014   11:30am - 11:45am
 
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Amorphous hydrogenated silicon carbide (a-SiC:H) and silicon-carbon alloys are of significant interest for a number of interesting applications including microelectronic, optoelectronic, MEM/NEM, and biomedical devices due to it’s large bandgap (2-3 eV), high oxidation resistance, high Young’s modulus and hardness, and biocompatibility. Most recently, plasma deposited a-SiC:H has garnered additional interest as a potential low dielectric constant (low-k) material due to the ability to dramatically reduce k through the introduction of significant amounts of nano-porosity through careful control of hydrogen and terminal methyl group content in the as deposited films. As we will demonstrate in this report, the ability to precisely tune the hydrogen/terminal methyl group content in a-SiC:H allows a remarkable range of material properties to be observed that can be concisely explained using the Phillips-Thorpe Bond Constraint-Percolation theory originally developed for oxide and chalcogenide glasses. We will specifically demonstrate that a remarkable range in dielectric constant (< 3 - > 7), Young’s Modulus (< 5 - > 200 GPa), and thermal conductivity (0.09 - 4 W/mK) can be achieved in plasma deposited a-SiC:H films and that the range of observed properties is directly related to the average network and bond coordination of the films. We will additionally demonstrate how critical inflections points in the observed structure-property relationships can be easily explained using the Phillips-Thorpe Constraint Theory.
 


 
 
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