Keyword Suggestions

TJJ.02 - Tutorial JJ: Advances in Fracture Modeling: Micromechanical, Computational and Multiscale Aspects
Part 2: The Local Approach to Fracture to Practical Situations for Materials in Service  
December 1, 2013   1:30pm - 5:00pm

The second part of the tutorial, presented by Benoit Tanguy, was devoted to the application of the local approach to fracture to practical situations for materials in service. The variation of the brittle fracture toughness, KIc, with temperature (for a given thickness and a given strain rate) can be simply predicted with only two parameters. The Weibull theory was used to predict the variation of KIc with specimen thickness and loading rate. The effects of metallurgical inhomogeneities and non-isothermal loading (Warm Prestress Effect) were also considered. A similar approach for ductile fracture was introduced. Both approaches (ductile and brittle) were used to show how the ductile-to-brittle transition in ferritic steels can be interpreted. A special emphasis was placed on the effect of irradiation in nuclear components on the shift of the ductile-to-brittle transition temperature. Very recent results showing the variation of inter-granular fracture toughness with the amount of impurities (P, C) segregated at grain boundaries will be presented. These results illustrate the predictive potential of the LAF methodology when applied to structural steels.

Average Rating: (No Ratings)
  Was great, surpassed expectations, and I would recommend this
  Was good, met expectations, and I would recommend this
  Was okay, met most expectations
  Was okay but did not meet expectations
  Was bad and I would not recommend this

Selective Molecular Transport through Controlled Pores in Large-Area Graphene Membranes
Large-Area CVD Graphene as Molecular Template and Transparent Electrode for Organic Solar Cells
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
Hybrid Superconductor-Semiconductor Nanowire Devices
Switching in Silicon Nanotube Field Effect Transistors